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A Product Line of Diodes Incorporated
ZXMHC3F381N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS QG RDS(on) 33m @ VGS= 10V N-CH 30V 9.0nC 60m @ VGS= 4.5V 55m @ VGS= -10V P-CH -30V 12.7nC 80m @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25C 5.0A
Description
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
* *
2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive
P1D/N1D
P2D/N2D
Applications
* *
N1G
N2G
DC Motor control DC-AC Inverters
N1S/N2S
Ordering information
Device ZXMHC3F381N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
Device marking
ZXMHC 3F381
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ZXMHC3F381N8
Absolute maximum ratings
Parameter
Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25C @ VGS= 10V; TA=70C @ VGS= 10V; TA=25C @ VGS= 10V; TL=25C Pulsed Drain current @ VGS= 10V; TA=25C
(c) (b) (b) (b) (a) (f)
Symbol
VDSS VGS ID
Nchannel
30 20 4.98 3.98 3.98 4.17
Pchannel
-30 20 -4.13 -3.31 -3.36 -3.51 -19.6 -2.0 -19.6
Unit
V V A
IDM IS ISM PD PD PD Tj, Tstg
22.9 2.0 22.9 0.87 6.94 1.35 10.9 0.95 7.63
A A A W mW/C W mW/C
Continuous Source current (Body diode) at TA =25C Pulsed Source current (Body diode) at TA =25C Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TL =25C Linear derating factor
(a) (b) (f) (c)
0.98 7.81
W mW/C C
Operating and storage temperature range
-55 to 150
Thermal resistance
Parameter
Junction to ambient Junction to ambient Junction to ambient Junction to ambient Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. Same as note (a), except the device is measured at t 10 sec. Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die.
Symbol
(a) (b) (d) (e)
Value
144 92 106 254 131 128
Unit
C/W C/W C/W C/W C/W
RJA RJA RJA RJA RJL
(f)
(b) (c) (d)
(e) (f)
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Thermal characteristics
RDS(ON)
RDS(ON)
-ID Drain Current (A)
ID Drain Current (A)
10 Limited
10 Limited
1
DC 1s 100ms Note (a) Single Pulse, T amb=25C 10ms 1ms 100us
1
DC 1s 100ms 10ms Note (a) Single Pulse, T amb=25C 1ms 100us
100m
100m
10m 0.1
10m 0.1
1
10
1
10
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
140 120 100 80 60 40 20 0 100 1m 10m 100m 1
D=0.2 Single Pulse D=0.05 D=0.1 D=0.5
P-channel Safe Operating Area
1.0
Max Power Dissipation (W)
Thermal Resistance (C/W)
One Active Die 25 x 25mm 1oz
Any one active die
0.5
0.0 0 25 50 75 100 125 150
10
100
1k
Pulse Width (s)
Temperature (C)
Transient Thermal Impedance
100
One Active Die Single Pulse T amb=25C
Derating Curve
Maximum Power (W)
10
1 100 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
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N-channel electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 11.8 1.0 30 0.5 V A nA V S ID = 250A, VGS= 0V VDS= 30V, VGS= 0V VGS= 20V, VDS= 0V ID= 250A, VDS= VGS VGS= 10V, ID= 5A VGS= 4.5V, ID= 4A VDS= 15V, ID= 5A
100
3.0 0.033 0.060
Dynamic
Capacitance
(c)
Input capacitance Output capacitance Reverse transfer capacitance Switching
(b) (c)
Ciss Coss Crss
430 101 56
pF pF pF VDS= 15V, VGS= 0V f= 1MHz
Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge
(c)
td(on) tr td(off) tf
2.5 3.3 11.5 6.3
ns ns ns ns VDD= 15V, VGS= 10V ID= 1A RG 6,
Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time
(a) (c) (c)
Qg Qgs Qgd
9.0 1.7 2.0
nC nC nC VDS=15V, VGS= 10V ID= 5A
VSD trr Qrr
0.82 12 4.9
1.2
V ns nC
IS= 1.7A, VGS= 0V IS= 2.1A, di/dt= 100A/s
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing
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N-channel typical characteristics
10V
ID Drain Current (A)
ID Drain Current (A)
10
4.5V 4V
VGS
T = 150C
10V
4.5V
4V 3.5V
VGS
10
3.5V
3V
1
3V
1
2.5V
0.1
T = 25C 2.5V
0.1
2V
0.01 0.1
0.01
VDS Drain-Source Voltage (V)
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
Output Characteristics
10
Output Characteristics
Normalised RDS(on) and VGS(th)
VDS = 10V
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0
VGS = 10V ID = 5A RDS(on)
ID Drain Current (A)
1
T = 150C
0.1
T = 25C
VGS(th) VGS = VDS ID = 250uA
0.01
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
1000
T = 25C
VGS Gate-Source Voltage (V)
2
3
4
Tj Junction Temperature (C)
50
100
150
Normalised Curves v Temperature
10
T = 150C
VGS
100
3V
ISD Reverse Drain Current (A)
2.5V
1
10 1 0.1 0.01 0.01
3.5V 4V 4.5V 10V
0.1
T = 25C
0.01
0.1
On-Resistance v Drain Current
ID Drain Current (A)
1
10
1E-3 0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
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N-channel typical characteristics -continued
600
VGS Gate-Source Voltage (V)
VGS = 0V
C Capacitance (pF)
500 400 300 200 100 0 1
CISS
f = 1MHz
COSS CRSS
10
10 9 8 7 6 5 4 3 2 1 0
ID = 5A
VDS = 15V
0
1
2
VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC)
3
4
5
6
7
8
9
Gate-Source Voltage v Gate Charge
Test circuits
Current regulator
QG
12V 50k Same as D.U.T
VG
QGS
QGD
VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90%
VGS RG RD VDS VDD
10% VGS td(on) t(on) tr td(off) t(on) tr
Switching time waveforms
Switching time test circuit
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ZXMHC3F381N8
P-channel electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 14 -1.0 -30 -0.5 V A nA V S ID = -250A, VGS= 0V VDS= -30V, VGS= 0V VGS= 20V, VDS= 0V ID= -250A, VDS= VGS VGS= -10V, ID= -5A VGS= -4.5V, ID= -4A VDS= -15V, ID= -5A
100
-3.0 0.055 0.080
Dynamic
Capacitance
(c)
Input capacitance Output capacitance Reverse transfer capacitance Switching
(b) (c)
Ciss Coss Crss
670 126 70
pF pF pF VDS= -15V, VGS= 0V f= 1MHz
Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge
(c)
td(on) tr td(off) tf
1.9 3.0 30 21
ns ns ns ns VDD= -15V, VGS= -10V ID= -1A RG 6
Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time
(a) (c) (c)
Qg Qgs Qgd
12.7 2.0 2.4
nC nC nC VDS= -15V, VGS= -10V ID= -5A
VSD trr Qrr
-0.82 16.5 11.5
-1.2
V ns nC
IS= -1.7A, VGS= 0V IS= -2.1A, di/dt= 100A/s
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing
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ZXMHC3F381N8
P-channel typical characteristics
T = 25C
10V
4.5V
4V
T = 150C
10V
4V
3.5V 3V 2.5V
-ID Drain Current (A)
3.5V 3V
-ID Drain Current (A)
10
10
1
2.5V
1
2V
0.1
VGS
VGS
0.01 0.1
0.1
-VDS Drain-Source Voltage (V)
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6 10
Output Characteristics
VGS = 10V ID = 5A RDS(on)
Normalised RDS(on) and VGS(th)
VDS = 10V
-ID Drain Current (A)
1.4 1.2 1.0 0.8
T = 150C
1
T = 25C
VGS = VDS
0.6 0.4 -50 0 50
ID = 250uA
VGS(th)
0.1 2.0
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
-VGS Gate-Source Voltage (V)
2.5
3.0
3.5
Tj Junction Temperature (C)
100
150
Normalised Curves v Temperature
10
T = 150C
2.5V
T = 25C
VGS
10
3V 3.5V 4V
-ISD Reverse Drain Current (A)
1
1
0.1
T = 25C
0.1
4.5V 10V
0.01
Vgs = 0V
0.01 0.01
1E-3
0.1
On-Resistance v Drain Current
-ID Drain Current (A)
1
10
0.2
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage
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P-channel typical characteristics -continued
1000
-VGS Gate-Source Voltage (V)
VGS = 0V
800 600 400 200 0
CISS
f = 1MHz
COSS CRSS
1
10
10 9 8 7 6 5 4 3 2 1 0
ID = 5A
C Capacitance (pF)
VDS = 15V
0
-VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage
Q - Charge (nC)
5
10
15
Gate-Source Voltage v Gate Charge
Test circuits
Current regulator
QG
12V 0.2 F 50k Same as D.U.T
VG
QGS
QGD
VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90%
VGS RG RD VDS VDD
10% VGS tr t(on) td(off) tr t(on) td(on)
Pulse width 1 S Duty factor 0.1%
Switching time waveforms
Switching time test circuit
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Packaging details - SO8
DIM
Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050
Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27
DIM
Inches Min. Max.
Millimeters Min. Max.
A A1 D H E L
0.053 0.004 0.189 0.228 0.150 0.016
e b c -
0.050 BSC 0.013 0.008 0 0.020 0.010 8 -
1.27 BSC 0.33 0.19 0 0.51 0.25 8 -
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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